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Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation...
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| Main Authors: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2011
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3212224/ https://ncbi.nlm.nih.gov/pubmed/21711596 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-76 |
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