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Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells

We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation...

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Detalhes bibliográficos
Main Authors: Jo, Masafumi, Duan, Guotao, Mano, Takaaki, Sakoda, Kazuaki
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2011
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3212224/
https://ncbi.nlm.nih.gov/pubmed/21711596
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-76
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