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Morphology Analysis of Si Island Arrays on Si(001)
The formation of nanometer-scale islands is an important issue for bottom-up-based schemes in novel electronic, optoelectronic and magnetoelectronic devices technology. In this work, we present a detailed atomic force microscopy analysis of Si island arrays grown by molecular beam epitaxy. Recent re...
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| Autores principales: | , , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Springer
2010
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2991161/ https://ncbi.nlm.nih.gov/pubmed/21170139 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-010-9725-8 |
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