Loading...
Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell
We study memory devices consisting of single-walled carbon nanotube transistors with charge storage at the SiO(2)/nanotube interface. We show that this type of memory device is robust, withstanding over 10(5) operating cycles, with a current drive capability up to 10(−6) A at 20 mV drain bias, thus...
Na minha lista:
| Main Authors: | , , , , |
|---|---|
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer
2010
|
| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2964474/ https://ncbi.nlm.nih.gov/pubmed/21124628 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-010-9727-6 |
| Tags: |
Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!
|