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Silicon on Insulator MESFETs for RF Amplifiers
CMOS compatible, high voltage SOI MESFETs have been fabricated using a standard 3.3V CMOS process without any changes to the process flow. A 0.6μm gate length device operates with a cut-off frequency of 7.3GHz and a maximum oscillation frequency of 21GHz. There is no degradation in device performanc...
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| Main Authors: | , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
2010
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2907925/ https://ncbi.nlm.nih.gov/pubmed/20657816 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/j.sse.2009.10.016 |
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