Загрузка...
Pores in n-Type InP: A Model System for Electrochemical Pore Etching
The growth mechanism of currentline-oriented pores in n-type InP has been studied by Fast-Fourier-Transform Impedance Spectroscopy (FFT IS) applied in situ during pore etching and by theoretical calculations. Several pore growth parameters could thus be extracted in situ that are otherwise not obtai...
Сохранить в:
| Главные авторы: | , , |
|---|---|
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Springer
2010
|
| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2894204/ https://ncbi.nlm.nih.gov/pubmed/20596354 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-010-9624-z |
| Метки: |
Добавить метку
Нет меток, Требуется 1-ая метка записи!
|