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Localized Heating on Silicon Field Effect Transistors: Device Fabrication and Temperature Measurements in Fluid
We demonstrate electrically addressable localized heating in fluid at the dielectric surface of silicon-on-insulator field-effect transistors via radio-frequency Joule heating of mobile ions in the Debye layer. Measurement of fluid temperatures in close vicinity to surfaces poses a challenge due to...
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| Autors principals: | , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
2009
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2882169/ https://ncbi.nlm.nih.gov/pubmed/19967115 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1039/b906048k |
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