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Modeling and simulation of electronic structure, material interface and random doping in nano electronic devices
The miniaturization of nano-scale electronic devices, such as metal oxide semiconductor field effect transistors (MOSFETs), has given rise to a pressing demand in the new theoretical understanding and practical tactic for dealing with quantum mechanical effects in integrated circuits. Modeling and s...
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| Main Authors: | , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2010
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2852905/ https://ncbi.nlm.nih.gov/pubmed/20396650 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/j.jcp.2010.02.002 |
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