Study of electrical characterization of 2-methyl-9, 10-di(2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer

An efficient p-doped transport layer composed of an ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) and tungsten oxide (WO(3)) has been developed. The admittance spectroscopy studies show that the incorporation of WO(3) into MADN can greatly improve the hole injection and the condu...

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Detalhes bibliográficos
Main Authors: Hsieh, Ming-Ta, Ho, Meng-Huan, Lin, Kuan-Heng, Chen, Jenn-Fang, Chen, Teng-Ming, Chen, Chin H.
Formato: Artigo
Idioma:Inglês
Publicado em: American Institute of Physics 2009
Assuntos:
Device Physics
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC2728342/
https://ncbi.nlm.nih.gov/pubmed/19690631
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.3173824
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