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Dimensional crossover and weak localization in a 90 nm n-GaAs thin film
We report on the magnetotransport in a 90 nm thick n-type GaAs epitaxial thin film in the weak localization (WL) regime. Low temperature (T≤50 K) magnetotransport data are fit with WL theory, from which the phase coherence time, τ(ϕ)∝T(−p) (p=1.22±0.01), are extracted. We conclude that the dominant...
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| Main Authors: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American Institute of Physics
2009
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2723832/ https://ncbi.nlm.nih.gov/pubmed/19668705 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.3176968 |
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