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Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O
Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65×10(20) cm(−3) as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteres...
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| Main Authors: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American Institute of Physics
2009
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2719463/ https://ncbi.nlm.nih.gov/pubmed/19654883 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.3147856 |
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