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The filled skutterudite CeOs(4)As(12): A hybridization gap semiconductor

X-ray diffraction, electrical resistivity, magnetization, specific heat, and thermoelectric power measurements are presented for single crystals of the new filled skutterudite compound CeOs(4)As(12), which reveal phenomena that are associated with f-electron-conduction electron hybridization. Valenc...

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Autors principals: Baumbach, R. E., Ho, P. C., Sayles, T. A., Maple, M. B., Wawryk, R., Cichorek, T., Pietraszko, A., Henkie, Z.
Format: Artigo
Idioma:Inglês
Publicat: National Academy of Sciences 2008
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Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC2582311/
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.0808991105
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