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Broken symmetry and critical transport properties of random metals
Recent experimental data on the conductivity σ(+)(T), T → 0, on the metallic side of the metal–insulator transition in ideally random (neutron transmutation-doped) (70)Ge:Ga have shown that σ(+)(0) ∝ (N − N(c))(μ) with μ = ½, confirming earlier ultra-low-temperature results for Si:P. This value is i...
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
The National Academy of Sciences of the USA
1997
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC23393/ https://ncbi.nlm.nih.gov/pubmed/11038579 |
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