p-Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells

To minimize interfacial power losses, thin (5–80 nm) layers of NiO, a p-type oxide semiconductor, are inserted between the active organic layer, poly(3-hexylthiophene) (P3HT) + [6,6]-phenyl-C(61) butyric acid methyl ester (PCBM), and the ITO (tin-doped indium oxide) anode of bulk-heterojunction ITO/...

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Detaylı Bibliyografya
Asıl Yazarlar: Irwin, Michael D., Buchholz, D. Bruce, Hains, Alexander W., Chang, Robert P. H., Marks, Tobin J.
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: National Academy of Sciences 2008
Konular:
Physical Sciences
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC2268537/
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.0711990105
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