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Correlative Studies of Gating in Cx46 and Cx50 Hemichannels and Gap Junction Channels

Transjunctional voltage (V(j)) gating of gap junction (GJ) channels formed of connexins has been proposed to occur by gating of the component hemichannels. We took advantage of the ability of Cx46 and Cx50 to function as unapposed hemichannels to identify gating properties intrinsic to hemichannels...

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Detalhes bibliográficos
Main Authors: Srinivas, Miduturu, Kronengold, Jack, Bukauskas, Feliksas F., Bargiello, Thaddeus A., Verselis, Vytas K.
Formato: Artigo
Idioma:Inglês
Publicado em: Biophysical Society 2005
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Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC1305229/
https://ncbi.nlm.nih.gov/pubmed/15596513
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1529/biophysj.104.054023
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