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Sol-Gel Processed Yttrium-Doped SnO<sub>2</sub> Thin Film Transistors
Y-doped SnO<sub>2</sub> thin film transistors were successfully fabricated by means of sol-gel process. The effect of Y concentration on the structural, chemical, and electrical properties of sol-gel-processed SnO<sub>2</sub> films was investigated via GIXRD, SPM, and XPS; th...
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主要な著者: | , , , , , , , , |
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フォーマット: | Artigo |
言語: | Inglês |
出版事項: |
MDPI AG
2020-02-01
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シリーズ: | Electronics |
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オンライン・アクセス: | https://www.mdpi.com/2079-9292/9/2/254 |
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