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Silicon Drift Detectors with the Drift Field Induced by PureB-Coated Trenches
Junction formation in deep trenches is proposed as a new means of creating a built-in drift field in silicon drift detectors (SDDs). The potential performance of this trenched drift detector (TDD) was investigated analytically and through simulations, and compared to simulations of conventional bulk...
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| Main Authors: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2016-10-01
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| Colecção: | Photonics |
| Assuntos: | |
| Acesso em linha: | http://www.mdpi.com/2304-6732/3/4/54 |
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