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Simulation of silicon wafers heating during rapid thermal processing using “UBTO 1801” unit

The present work is devoted to determination of the dependence of the heating temperature of the silicon wafer on the lamps power and the heating time during rapid thermal processing using “UBTO 1801” unit by irradiating the wafer backside with an incoherent flow of constant density light. As a resu...

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Main Authors: J. A. Solovjov, V. A. Pilipenko, V. P. Yakovlev
格式: Artigo
語言:Russo
出版: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2020-11-01
叢編:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
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在線閱讀:https://doklady.bsuir.by/jour/article/view/2903
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