Загрузка...
Simulation of silicon wafers heating during rapid thermal processing using “UBTO 1801” unit
The present work is devoted to determination of the dependence of the heating temperature of the silicon wafer on the lamps power and the heating time during rapid thermal processing using “UBTO 1801” unit by irradiating the wafer backside with an incoherent flow of constant density light. As a resu...
Сохранить в:
| Главные авторы: | , , |
|---|---|
| Формат: | Artigo |
| Язык: | Russo |
| Опубликовано: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2020-11-01
|
| Серии: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Предметы: | |
| Online-ссылка: | https://doklady.bsuir.by/jour/article/view/2903 |
| Метки: |
Добавить метку
Нет меток, Требуется 1-ая метка записи!
|