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Simulation of silicon wafers heating during rapid thermal processing using “UBTO 1801” unit
The present work is devoted to determination of the dependence of the heating temperature of the silicon wafer on the lamps power and the heating time during rapid thermal processing using “UBTO 1801” unit by irradiating the wafer backside with an incoherent flow of constant density light. As a resu...
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| Hlavní autoři: | , , |
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| Médium: | Artigo |
| Jazyk: | Russo |
| Vydáno: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2020-11-01
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| Edice: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Témata: | |
| On-line přístup: | https://doklady.bsuir.by/jour/article/view/2903 |
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