Numerical Study of the Thermal and Flow Fields during the Growth Process of 800 kg and 1600 kg Silicon Feedstock

Two-dimensional (2D) transient numerical simulations are performed to investigate the evolution of the thermal and flow fields during the growth of multi-crystalline silicon ingots with two different silicon feedstock capacities, 800 kg and 1600 kg. The simulation results show that there are differe...

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Main Authors: Thi Hoai Thu Nguyen, Jyh Chen Chen, Chieh Hu, Chun Hung Chen, Yen Hao Huang, Huang Wei Lin, Andy Yu, Bruce Hsu, Michael Yang, Ray Yang
Formato: Artigo
Idioma:Inglês
Publicado: MDPI AG 2017-03-01
Series:Crystals
Assuntos:
multi-crystalline silicon
directional solidification
solar cells
Acceso en liña:http://www.mdpi.com/2073-4352/7/3/74
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