Quantitative Analysis of Memristance Defined Exponential Model for Multi-bits Titanium Dioxide Memristor Memory Cell

The ability to store multiple bits in a single memristor based memory cell is a key feature for high-capacity memory packages. Studying multi-bit memristor circuits requires high accuracy in modelling the memristance change. A memristor model based on a novel definition of memristance is proposed....

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Hauptverfasser: DAOUD, A. A. D., DESSOUKI, A. A. S., ABUELENIN, S. M.
Format: Artigo
Sprache:Inglês
Veröffentlicht: Stefan cel Mare University of Suceava 2016-05-01
Schriftenreihe:Advances in Electrical and Computer Engineering
Schlagworte:
analytical models
memristors
nonvolatile memory
SPICE
tunneling
Online Zugang:http://dx.doi.org/10.4316/AECE.2016.02011
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