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Quantitative Analysis of Memristance Defined Exponential Model for Multi-bits Titanium Dioxide Memristor Memory Cell
The ability to store multiple bits in a single memristor based memory cell is a key feature for high-capacity memory packages. Studying multi-bit memristor circuits requires high accuracy in modelling the memristance change. A memristor model based on a novel definition of memristance is proposed....
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| Main Authors: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Stefan cel Mare University of Suceava
2016-05-01
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| Colecção: | Advances in Electrical and Computer Engineering |
| Assuntos: | |
| Acesso em linha: | http://dx.doi.org/10.4316/AECE.2016.02011 |
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