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A wideband cryogenic microwave low-noise amplifier
A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds...
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| Hlavní autoři: | , , , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Beilstein-Institut
2020-09-01
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| Edice: | Beilstein Journal of Nanotechnology |
| Témata: | |
| On-line přístup: | https://doi.org/10.3762/bjnano.11.131 |
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