Controlling Injection Barriers for Ambipolar 2D Semiconductors via Quasi‐van der Waals Contacts

Abstract Barriers that charge carriers experience while injecting into channels play a crucial role on determining the device properties of van der Waals semiconductors (vdWS). Among various strategies to control these barriers, inserting a graphene layer underneath bulk metal may be a promising cho...

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Detalhes bibliográficos
Main Authors: Junjun Wang, Feng Wang, Zhenxing Wang, Ruiqing Cheng, Lei Yin, Yao Wen, Yu Zhang, Ningning Li, Xueying Zhan, Xiangheng Xiao, Liping Feng, Jun He
Formato: Artigo
Idioma:Inglês
Publicado em: Wiley 2019-06-01
Colecção:Advanced Science
Assuntos:
ambipolar 2D semiconductors
Fermi level pinning effect
Schottky barrier
substrate influence
van der Waals heterostructures
Acesso em linha:https://doi.org/10.1002/advs.201801841
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