Á lódáil...
THE INTENSITY OF SCATTERING OF CHARGE CARRIERS IN GRAPHENE, LOCATED ON A SUBSTRATE OF HEXAGONAL BORON NITRIDE
The results of modeling the scattering intensities of charge carriers in graphene located on a substrate of hexagonal boron nitride are presented. Graphene is considered a promising material for the formation of new semiconductor devices with good characteristics for the microwave and HF bands. Form...
Na minha lista:
| Main Authors: | , |
|---|---|
| Formáid: | Artigo |
| Teanga: | Russo |
| Foilsithe: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-12-01
|
| Sraith: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Ábhair: | |
| Rochtain Ar Líne: | https://doklady.bsuir.by/jour/article/view/2491 |
| Clibeanna: |
Cuir Clib Leis
Gan Chlibeanna, Bí ar an gcéad duine leis an taifead seo a chlibeáil!
|