লোডিং...
THE INTENSITY OF SCATTERING OF CHARGE CARRIERS IN GRAPHENE, LOCATED ON A SUBSTRATE OF HEXAGONAL BORON NITRIDE
The results of modeling the scattering intensities of charge carriers in graphene located on a substrate of hexagonal boron nitride are presented. Graphene is considered a promising material for the formation of new semiconductor devices with good characteristics for the microwave and HF bands. Form...
সংরক্ষণ করুন:
| প্রধান লেখক: | , |
|---|---|
| বিন্যাস: | Artigo |
| ভাষা: | Russo |
| প্রকাশিত: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-12-01
|
| মালা: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | https://doklady.bsuir.by/jour/article/view/2491 |
| ট্যাগগুলো: |
ট্যাগ যুক্ত করুন
কোনো ট্যাগ নেই, প্রথমজন হিসাবে ট্যাগ করুন!
|