Loss Model and Efficiency Analysis of Tram Auxiliary Converter Based on a SiC Device

Currently, the auxiliary converter in the auxiliary power supply system of a modern tram adopts Si IGBT as its switching device and with the 1700 V/225 A SiC MOSFET module commercially available from Cree, an auxiliary converter using all SiC devices is now possible. A SiC auxiliary converter protot...

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Main Authors: Hao Liu, Xianjin Huang, Fei Lin, Zhongping Yang
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2017-12-01
Colecção:Energies
Assuntos:
SiC MOSFET
tram
auxiliary converter
loss model
DC/DC converters
DC/AC inverters
Acesso em linha:https://www.mdpi.com/1996-1073/10/12/2018
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