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Investigation of Conductive Mechanism of Amorphous IGO Resistive Random-Access Memory with Different Top Electrode Metal
In this paper, resistive random-access memory (RRAM) with InGaO (IGO) as an active layer was fabricated by radio-frequency (RF) sputtering system and the resistive switching mechanism with the different top electrode (TE) of Pt, Ti, and Al were investigated. The Pt/IGO/Pt/Ti RRAM exhibits typical bi...
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| Autores principales: | , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI AG
2020-05-01
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| Colección: | Coatings |
| Materias: | |
| Acceso en línea: | https://www.mdpi.com/2079-6412/10/5/504 |
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