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Low-temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates
In a ferroelectric-gate thin film transistor memory (FGT) type structure, the gate-insulator layer is extremely important for inducing the charge when accumulating or depleting. We concentrated on the application of low-temperature PZT films crystallized at 450, 500 and 550 °C, instead of at convent...
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| Autors principals: | , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Elsevier
2016-03-01
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| Col·lecció: | Journal of Science: Advanced Materials and Devices |
| Matèries: | |
| Accés en línia: | http://www.sciencedirect.com/science/article/pii/S2468217916300120 |
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