Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices

Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching behavior. Recent studies have also indicated that the...

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Bibliographic Details
Main Authors: Zijin Wu, Tongtong Wang, Changqi Sun, Peitao Liu, Baorui Xia, Jingyan Zhang, Yonggang Liu, Daqiang Gao
Format: Artigo
Language:Inglês
Published: AIP Publishing LLC 2017-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4994227
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