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Simulation of forward current-voltage characteristics for Schottky diodes with MOS trenches
Present work is devoted to the development of a mathematical model for the forward current-voltage characteristic of Schottky diodes with a metal – oxide – semiconductor (MOS) trench structure, which takes into account the accumulation of the main carriers in silicon near the walls of the trenches a...
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| 第一著者: | |
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| フォーマット: | Artigo |
| 言語: | Russo |
| 出版事項: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2021-10-01
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| シリーズ: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| 主題: | |
| オンライン･アクセス: | https://doklady.bsuir.by/jour/article/view/3159 |
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