Edge-sensitive Semiconducting Behaviour in Low-defect Narrow Graphene Nanoribbons

Low-defect graphene nanoribbons (GNRs) derived from the unzipping of carbon nanotubes have exhibited large energy band gaps (transport gaps), despite having widths in the order of ∼100 nm. Here, we report on the unique semiconducting behaviour of very narrow, low-defect GNRs, with widths of less tha...

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Główni autorzy: Syota Kamikawa, Taisei Shimizu, Yuko Yagi, Junji Haruyama
Format: Artigo
Język:Inglês
Wydane: SAGE Publishing 2014-04-01
Seria:Nanomaterials and Nanotechnology
Hasła przedmiotowe:
Graphene
Nanoribbon
Edge
Semiconducting Behaviour
Impurity Level
Resonant Tunnelling
Dostęp online:http://www.intechopen.com/journals/nanomaterials_and_nanotechnology/edge-sensitive-semiconducting-behaviour-in-low-defect-narrow-graphene-nanoribbons
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