An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model

This paper presents an X-band 40 W power amplifier with high efficiency based on 0.25 μm GaN HEMT (High Electron Mobility Transistor) on SiC process. An equivalent RC (Resistance Capacitance) model is presented to provide accurate large-signal output impedances of GaN HEMTs with arbitrary dim...

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Bibliografische gegevens
Hoofdauteurs: Ruitao Chen, Ruchun Li, Shouli Zhou, Shi Chen, Jianhua Huang, Zhiyu Wang
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: MDPI AG 2019-01-01
Reeks:Electronics
Onderwerpen:
X-band
GaN
power amplifier
MMIC
Online toegang:http://www.mdpi.com/2079-9292/8/1/99
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