An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model

This paper presents an X-band 40 W power amplifier with high efficiency based on 0.25 μm GaN HEMT (High Electron Mobility Transistor) on SiC process. An equivalent RC (Resistance Capacitance) model is presented to provide accurate large-signal output impedances of GaN HEMTs with arbitrary dim...

Fuld beskrivelse

Na minha lista:
Bibliografiske detaljer
Main Authors: Ruitao Chen, Ruchun Li, Shouli Zhou, Shi Chen, Jianhua Huang, Zhiyu Wang
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2019-01-01
Serier:Electronics
Fag:
X-band
GaN
power amplifier
MMIC
Online adgang:http://www.mdpi.com/2079-9292/8/1/99
Tags: Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!

Lignende værker