Heat Dissipation Characteristics of IGBT Module Based on Flow-Solid Coupling

With the increase of power level and integration in electric vehicle controllers, the heat flux of the key silicon-based IGBT (Insulated Gate Bipolar Transistor) device has reached its physical limit. At present, third-generation semiconductor devices including SiC MOSFETs (Metal-Oxide-Semiconductor...

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Main Authors: Lipeng Tan, Peisheng Liu, Chenhui She, Pengpeng Xu, Lei Yan, Hui Quan
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2022-03-01
Colecção:Micromachines
Assuntos:
IGBT module
water-cooled heatsink
ANSYS
junction temperature
temperature field
fluent field
Acesso em linha:https://www.mdpi.com/2072-666X/13/4/554
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