טוען...
Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node
Fully Depleted Silicon on Insulator (FD SOI) technology nodes provide better resistance to single event upsets than comparable bulk technologies, but upsets are still likely to occur at nano-scale feature sizes, and additional hardening techniques should be explored. Three flip-flop designs were imp...
שמור ב:
| Main Authors: | , , , , , , |
|---|---|
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
MDPI AG
2022-04-01
|
| סדרה: | Applied Sciences |
| נושאים: | |
| גישה מקוונת: | https://www.mdpi.com/2076-3417/12/9/4229 |
| תגים: |
הוספת תג
אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!
|