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Low Computing Leakage, Wide-Swing Output Compensation Circuit for Linearity Improvement in SRAM Multi-Row Read Computing-in-Memory
To increase the throughput of computing-in-memory (CIM) designs, multi-row read methods have been adopted to increase computation in the analog region. However, the nonlinearity created by doing so degrades the precision of the results obtained. The results of CIM computation need to be precise in o...
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| Główni autorzy: | , , , , |
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| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
MDPI AG
2022-04-01
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| Seria: | Electronics |
| Hasła przedmiotowe: | |
| Dostęp online: | https://www.mdpi.com/2079-9292/11/9/1376 |
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