Low Computing Leakage, Wide-Swing Output Compensation Circuit for Linearity Improvement in SRAM Multi-Row Read Computing-in-Memory

To increase the throughput of computing-in-memory (CIM) designs, multi-row read methods have been adopted to increase computation in the analog region. However, the nonlinearity created by doing so degrades the precision of the results obtained. The results of CIM computation need to be precise in o...

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Main Authors: Zupei Gu, Huidong Zhao, Xiaoqin Wang, Shushan Qiao, Yumei Zhou
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2022-04-01
Colecção:Electronics
Assuntos:
computing-in-memory (CIM)
edge computing
compensation circuit
static random access memory (SRAM)
linearity
multi-row read
Acesso em linha:https://www.mdpi.com/2079-9292/11/9/1376
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