Controlling the Doping Depth in Silicon Micropillars

Micropillar arrays with radial p–n junctions are attractive for photovoltaic applications, because the light absorption and carrier collection become decoupled. The main challenge in manufacturing radial p–n junctions is achieving shallow (dopant depth <200 nm) and heavy doping (>10<sup>...

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Bibliografiska uppgifter
Huvudupphovsman: Amal Kabalan
Materialtyp: Artigo
Språk:Inglês
Publicerad: MDPI AG 2020-07-01
Serie:Applied Sciences
Ämnen:
micropillars
silicon
shallow doping
Länkar:https://www.mdpi.com/2076-3417/10/13/4581
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