Controlling the Doping Depth in Silicon Micropillars

Micropillar arrays with radial p–n junctions are attractive for photovoltaic applications, because the light absorption and carrier collection become decoupled. The main challenge in manufacturing radial p–n junctions is achieving shallow (dopant depth <200 nm) and heavy doping (>10<sup>...

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Bibliographic Details
Main Author: Amal Kabalan
Format: Artigo
Language:Inglês
Published: MDPI AG 2020-07-01
Series:Applied Sciences
Subjects:
micropillars
silicon
shallow doping
Online Access:https://www.mdpi.com/2076-3417/10/13/4581
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