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FGMOS Based Voltage-Controlled Grounded Resistor
This paper proposes a new floating gate MOSFET (FGMOS) based voltage-controlled grounded resistor. In the proposed circuit FGMOS operating in the ohmic region is linearized by another conventional MOSFET operating in the saturation region. The major advantages of FGMOS based voltage-controlled groun...
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| Main Authors: | , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Spolecnost pro radioelektronicke inzenyrstvi
2010-09-01
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| Colecção: | Radioengineering |
| Assuntos: | |
| Acesso em linha: | http://www.radioeng.cz/fulltexts/2010/10_03_455_459.pdf |
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