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Advanced Si solid phase crystallization for vertical channel in vertical NANDs
The advanced solid phase crystallization (SPC) method using the SiGe/Si bi-layer structure is proposed to obtain high-mobility poly-Si thin-film transistors in next generation vertical NAND (VNAND) devices. During the SPC process, the top SiGe thin film acts as a selective nucleation layer to induce...
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| Main Authors: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
AIP Publishing LLC
2014-07-01
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| Colecção: | APL Materials |
| Acesso em linha: | http://dx.doi.org/10.1063/1.4887418 |
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