Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor

The latent enhanced low dose rate sensitivity (ELDRS) effect is observed in the double-polysilicon self-aligned (DPSA) technology PNP bipolar junction transistor (BJT) irradiated with a high and low dose rate gamma ray, which is discussed from the perspective of the three-stage degradation rate of t...

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Main Authors: Mohan Liu, Wu Lu, Xin Yu, Xin Wang, Xiaolong Li, Shuai Yao, Qi Guo
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2019-06-01
Colecção:Electronics
Assuntos:
saturation effect
gain degradation
total ionizing dose
gamma ray
bipolar transistor
Acesso em linha:https://www.mdpi.com/2079-9292/8/6/657
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