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Silicon Carbide/Polysilazane Composite: Effect of Temperature on the Densification, Phase, and Microstructure Evolution
This paper reports a route to suppress the grain growth in silicon carbide (SiC) during its sintering by combining it with polysilazane (PSZ). SiC was mixed with PSZ in a 1:1 weight ratio and sintered at 1600, 1700, and 1800 °C in a hot-pressing furnace. A satisfactory density was obtained at sinter...
Gorde:
| Egile Nagusiak: | , , , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Department of Chemistry, Universitas Gadjah Mada
2022-01-01
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| Saila: | Indonesian Journal of Chemistry |
| Gaiak: | |
| Sarrera elektronikoa: | https://jurnal.ugm.ac.id/ijc/article/view/69118 |
| Etiketak: |
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