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Origin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switching
NiO films grown on Pt and Nb:SrTiO3 (NSTO) substrates display filament-type and interface-type resistance switching (RS), respectively. The resistance retention studies show that these two different RSs also lead to distinct resistance evolutions. For Pt/NiO/Pt, both high and low resistance states h...
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| Main Authors: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
AIP Publishing LLC
2020-10-01
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| Colecção: | AIP Advances |
| Acesso em linha: | http://dx.doi.org/10.1063/5.0007173 |
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