High-current density terahertz resonant runneling diodes grown by MOCVD

AlAs/InGaAs/AlAs resonant tunneling materials was optimized, and terahertz resonant tunneling diodes grown by MOCVD is first fabricated. The epitaxial layers of the RTD were grown on semi-insulating InP substrate. InP-based RTD were fabricated by using contact lithography and air bridge technology.T...

詳細記述

保存先:
書誌詳細
主要な著者: Che Xianghui, Liang Shixiong, Zhang Lisen, Gu Guodong, Hao Wenjia, Yang Dabao, Chen Hongtai, Feng Zhihong
フォーマット: Artigo
言語:Chinês
出版事項: National Computer System Engineering Research Institute of China 2019-08-01
シリーズ:Dianzi Jishu Yingyong
主題:
resonant tunneling diodes
peak current density
peak to valley current ratio
オンライン･アクセス:http://www.chinaaet.com/article/3000107044
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