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High-current density terahertz resonant runneling diodes grown by MOCVD
AlAs/InGaAs/AlAs resonant tunneling materials was optimized, and terahertz resonant tunneling diodes grown by MOCVD is first fabricated. The epitaxial layers of the RTD were grown on semi-insulating InP substrate. InP-based RTD were fabricated by using contact lithography and air bridge technology.T...
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| Main Authors: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Chinês |
| Publicado em: |
National Computer System Engineering Research Institute of China
2019-08-01
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| Colecção: | Dianzi Jishu Yingyong |
| Assuntos: | |
| Acesso em linha: | http://www.chinaaet.com/article/3000107044 |
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