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Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs

Topological materials have attracted a lot of attention in the field of beyond Complementary Metal Oxide Semiconductor (CMOS) devices. Topological Insulators (TI) have been proposed for future high electron mobility field effect transistor (FET) devices that make the physics of operation and especia...

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Autors principals: Protyush Sahu, Jun-Yang Chen, Jian-Ping Wang
Format: Artigo
Idioma:Inglês
Publicat: AIP Publishing LLC 2020-01-01
Col·lecció:AIP Advances
Accés en línia:http://dx.doi.org/10.1063/1.5130198
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