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Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs
Topological materials have attracted a lot of attention in the field of beyond Complementary Metal Oxide Semiconductor (CMOS) devices. Topological Insulators (TI) have been proposed for future high electron mobility field effect transistor (FET) devices that make the physics of operation and especia...
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Autors principals: | , , |
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Format: | Artigo |
Idioma: | Inglês |
Publicat: |
AIP Publishing LLC
2020-01-01
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Col·lecció: | AIP Advances |
Accés en línia: | http://dx.doi.org/10.1063/1.5130198 |
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