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Towards the Realization of Graphene Based Flexible Radio Frequency Receiver

We report on our progress and development of high speed flexible graphene field effect transistors (GFETs) with high electron and hole mobilities (~3000 cm2/V·s), and intrinsic transit frequency in the microwave GHz regime. We also describe the design and fabrication of flexible graphene based radio...

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Hlavní autoři: Maruthi N. Yogeesh, Kristen N. Parrish, Jongho Lee, Saungeun Park, Li Tao, Deji Akinwande
Médium: Artigo
Jazyk:Inglês
Vydáno: MDPI AG 2015-11-01
Edice:Electronics
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On-line přístup:http://www.mdpi.com/2079-9292/4/4/933
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