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Molecular beam epitaxial growth and optical characterization of AlGaN nanowires with reduced substrate temperature
The requirement of high growth temperature for high-quality epitaxial AlGaN, which is typically around 100 °C higher than the growth temperature of GaN, is unfavorable for p-type dopant (Mg) incorporation, representing a grand challenge for AlGaN deep ultraviolet (UV) light-emitting devices. In this...
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| Asıl Yazarlar: | , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
AIP Publishing LLC
2020-02-01
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| Seri Bilgileri: | AIP Advances |
| Online Erişim: | http://dx.doi.org/10.1063/1.5140572 |
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