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Theoretical Calculation of Reorientation Energy in Metal /Semiconductor Interface
A theoretical calculation of the reorientation energy for non adiabatic electron transfer at interface between metal and semiconductor system was carried out. The continuum outer sphere theory of electron transfer reaction has been extensively used for electron transfer between metal/semiconduct...
Wedi'i Gadw mewn:
| Prif Awduron: | , |
|---|---|
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
University of Baghdad
2017-05-01
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| Cyfres: | Ibn Al-Haitham Journal for Pure and Applied Sciences |
| Pynciau: | |
| Mynediad Ar-lein: | https://jih.uobaghdad.edu.iq/index.php/j/article/view/573 |
| Tagiau: |
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